书目信息 |
| 书名： | Nanoscale transistors | |
| 作者： | Mark Lundstrom, Jing Guo. | |
| 分册号： | ||
| 分册名： | 出版地： | 北京 : |
|
| 出版社： | 科学出版社 | |
| 出版时间： | 2007. | |
| 页数： | viii, 217 p. : | |
| 开本： | 24 cm. | |
| 丛书名： | 微纳技术著作丛书(影印版) | |
| 中图分类号： | ||
| 科图分类号： | ||
| 其他分类号： | H31:TN325 | |
| 主题词： | ||
| 电子资源： | ||
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| 003 | CAL | |
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| 020 | @a9787030182425. | |
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| 100 | 1 | @aLundstrom, Mark. |
| 245 | 10 | @aNanoscale transistors :@bdevice physics, modeling and simulation = 纳米晶体管 : 器件物理学, 建模和仿真 / @cMark Lundstrom, Jing Guo. |
| 246 | 31 | @a纳米晶体管 :@b器件物理学, 建模和仿真 |
| 260 | @a北京 :@b科学出版社,@c2007. | |
| 300 | @aviii, 217 p. :@bill. ;@c24 cm. | |
| 440 | 0 | @a微纳技术著作丛书(影印版) |
| 504 | @aIncludes bibliographical references and index. | |
| 534 | @pReprint. Originally published:@cNew York : Springer, c2006.@z0387280022 (hbk.)@z9780387280028 (hbk.) | |
| 650 | 0 | @aNanostructured materials@xMathematical models. |
| 650 | 0 | @aMetal oxide semiconductor field-effect transistors@xMathematical models. |
| 650 | 0 | @aNanotechnology. |
| 700 | 1 | @aGuo, Jing,@d1977- |
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| Nanoscale transistors : : device physics, modeling and simulation = 纳米晶体管 : 器件物理学, 建模和仿真 / / Mark Lundstrom, Jing Guo.-北京 : : 科学出版社, , 2007. |
| viii, 217 p. : : ill. ; ; 24 cm.- (微纳技术著作丛书(影印版)) |
| Includes bibliographical references and index. |
| ISBN 9787030182425. |
| ● |
| 相关链接 |
正题名：Nanoscale transistors
索取号：H31:TN325/1
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